Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices W. Vogel & M. Büttner GmbH made nuclear techniques highly suitable

made nuclear techniques highly suitable tools for basic and applied research in this field

die nach dem Tode ihres Vaters völlig mittellos dasteht

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stellen an die Mitarbeiter hohe Anforderungen

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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices W. Vogel & M. Büttner GmbH made nuclear techniques highly suitableAn extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0. 1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1 3 nm regime. The main thrust of the